A 160-GHz low-noise downconverter in a SiGe HBT technology

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Abstract

A 160-GHz downconversion front-end for imaging arrays fabricated in a SiGe HBT technology is presented. The front-end features a fully differential architecture compatible with balanced on or off-chip antennas consisting of a three-stage LNA with 24 dB gain and Gilbert-cell mixer operating from -7dBm fundamental LO signal. The downconverter consumes 50 mA from a 3.3V supply and requires is 0.1 mm2 die area (excl. pads) per channel. With an 160-GHz input signal and an IF frequency of 150 MHz, the implemented front-end yields a 27-dB conversion gain and a 7.4-dB/9.5-dB (without/with auxiliary on-chip input balun) system noise figure. © 2010 EuMA.

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Öjefors, E., Pourchon, F., Chevalier, P., & Pfeiffer, U. R. (2010). A 160-GHz low-noise downconverter in a SiGe HBT technology. In European Microwave Week 2010, EuMW2010: Connecting the World, Conference Proceedings - European Microwave Conference, EuMC 2010 (pp. 521–524).

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