Cu(In,Ga)Se2 (CIGS) solar cells have been designed for operation under mildly concentrated sunlight. The absorber was deposited via a three-stage evaporation process that has consistently yielded high-performance one-sun devices. The device structure reported here was modified by reducing the thickness of the CdS window/buffer layer to enhance the short-circuit current at the expense of the open-circuit voltage. Operation of the devices under optical enhancement leads to significant increases in the voltage and fill factor. At 14 suns, the open-circuit voltage for this device was 736 mV, the fill factor was 80·5%, and the efficiency was 21·5%. This result represents the first report of a polycrystalline thin-film solar cell with an efficiency in excess of 20%.
CITATION STYLE
Ward, J. S., Ramanathan, K., Hasoon, F. S., Coutts, T. J., Keane, J., Contreras, M. A., … Noufi, R. (2002). A 21·5% efficient Cu(In,Ga)Se2 thin-film concentrator solar cell. Progress in Photovoltaics: Research and Applications, 10(1), 41–46. https://doi.org/10.1002/pip.424
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