The realization of semiconductor laser diodes and light-emitting diodes that emit short-wavelength ultraviolet light is of considerable interest for a number of applications including chemical/biochemical analysis, high-density data storage and material processing. Group III nitride materials are one of the most promising candidates for fabricating such devices. Here we describe an AlGaN multiple-quantum-well laser diode that emits light at 342 nm, the shortest wavelength ever reported for an electrically driven laser diode. To fabricate the laser, a low-dislocation-density AlGaN layer with an AlN mole fraction of 0.3 was grown on a sapphire substrate using a hetero facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method. An AlGaN multiple-quantum-well structure was then grown on the high-quality AlGaN layer. Lasing at a wavelength of 342.3 nm was observed under pulsed current mode at room temperature. © 2008 Macmillan Publishers Limited. All rights reserved.
CITATION STYLE
Yoshida, H., Yamashita, Y., Kuwabara, M., & Kan, H. (2008). A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode. Nature Photonics, 2(9), 551–554. https://doi.org/10.1038/nphoton.2008.135
Mendeley helps you to discover research relevant for your work.