A 1-Kb HfO2 based RRAM for high speed nonvolatile memory application is proposed. With this chip, a high speed write characteristic in the RRAM cell can be achieved. The present circuit design includes a 1T1R RRAM (1 transistor/1 resistive memory) cell and a voltage write circuit, which limit the current through the memory cell. The random write time at VDD = 3.3V is as fast as 5 ns in the RRAM, which were fabricated with a 0.18 m TSMC process.
CITATION STYLE
Sheu, S. S., Chiang, P. C., Lin, W. P., Lee, H. Y., Chen, P. S., Chen, Y. S., … Tsai, M. J. (2009). A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme. In IEEE Symposium on VLSI Circuits, Digest of Technical Papers (pp. 82–83).
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