Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene

Abstract

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e., gated or doped with a tunable and finite carrier density) two-dimensional graphene layers as a function of temperature (T) and carrier density (n). We find a temperature-dependent phonon-limited resistivity ρph (T) to be linear in temperature for T 50 K with the room-temperature intrinsic mobility reaching the values of above 105 cm2 V s. We comment on the low-temperature Bloch-Grüneisen behavior where ρph (T) ∼ T4 for unscreened electron-phonon coupling. © 2008 The American Physical Society.