Abstract
The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Lee, Y. S., Chua, D., Brandt, R. E., Siah, S. C., Li, J. V., Mailoa, J. P., … Buonassisi, T. (2014). Atomic layer deposited gallium oxide buffer layer enables 1.2 v open-circuit voltage in cuprous oxide solar cells. Advanced Materials, 26(27), 4704–4710. https://doi.org/10.1002/adma.201401054
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