Common-anion rule and its limits: Photoemission studies of CuInxGa1-xSe2-Ge and CuxAg1-xInSe2-Ge interfaces

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Abstract

Synchrotron-radiation photoemission data show that the valence-band discontinuities of CuInxGa1-xSe2-Ge and CuxAg1-xInSe2-Ge interfaces are independent of x within the experimental accuracy of 0.1 eV. We argue that this result is consistent with the Wei-Zunger explanation of the breakdown of the common-anion rule, which is based on a substantial role of the cation d states in determining the valence-band-edge position. © 1987 The American Physical Society.

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Kilday, D. G., Margaritondo, G., Ciszek, T. F., Deb, S. K., Wei, S. H., & Zunger, A. (1987). Common-anion rule and its limits: Photoemission studies of CuInxGa1-xSe2-Ge and CuxAg1-xInSe2-Ge interfaces. Physical Review B, 36(17), 9388–9391. https://doi.org/10.1103/PhysRevB.36.9388

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