Comparison of Wide Bandgap Semiconductors for Power Applications

Abstract

Recent development advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices can not handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, new semiconductor materials for power device applications are needed. For high power requirements, wide band gap semiconductors like silicon carbide (SiC), gallium nitride (GaN), and diamond with their superior electrical properties are likely candidates to replace Si in the near future. This paper compares all the aforementioned wide bandgap semiconductors with respect to their promise and applicability for power applications and predicts the future of power device semiconductor materials.