Abstract
Enhancement of light extraction from an integrated ZnO nanotips/GaN light emitting diode (LED) is demonstrated. The device is composed of a GaN LED with a Ga-doped ZnO (GZO) transparent conductive layer and ZnO nanotips grown on GZO for light extraction. The light output power of a ZnO nanotips/GZO/GaN LED exhibits 1.7 times enhancement, in comparison with a conventional NiAu p -metal LED. The higher emission efficiency is attributed to the enhanced light transmission and scattering in the ZnOGaN multilayer. © 2007 American Institute of Physics.
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CITATION STYLE
Zhong, J., Chen, H., Saraf, G., Lu, Y., Choi, C. K., Song, J. J., … Shen, H. (2007). Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency. Applied Physics Letters, 90(20). https://doi.org/10.1063/1.2741052
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