Time-resolved optical characterization is an indispensable tool to study the recombination mechanisms of excitons and/or carriers based on radiative, non-radiative, localization and many-body processes. In this paper, we review the instrumentation of various spectroscopic techniques for the assessment of InxGa1-xN-based semiconductors such as time-resolved photoluminescence (TRPL), time-resolved electroluminescence (TREL), transient grating (TG) method to probe photothermal processes, microscopic TRPL using optical microscope, submicroscopic TRPL using scanning near field optical microscopy (SNOM) and pump-and-probe spectroscopy for the measurement of transient absorption/gain spectra. The obtained results are cited in the references.
CITATION STYLE
Kawakami, Y., Omae, K., Kaneta, A., Okamoto, K., Izumi, T., Saijou, S., … Fujita, S. (2001). Radiative and nonradiative recombination processes in GaN-based semiconductors. Physica Status Solidi (A) Applied Research, 183(1), 41–50. https://doi.org/10.1002/1521-396X(200101)183:1<41::AID-PSSA41>3.0.CO;2-V
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