III-V compound multi-junction (MJ) (tandem) solar cells have the potential for achieving high conversion efficiencies of over 50% and are promising for space and terrestrial applications. We have proposed AlInP-InGaP double hetero (DH) structure top cell, wide-band gap InGaP DH structure tunnel junction for sub cell interconnection, and lattice-matched InGaAs middle cell. In 2004, we have successfully fabricated world-record efficiency concentrator InGaP/InGaAs/Ge 3-junction solar cells with an efficiency of 37.4% at 200-suns AM1.5 as a result of widening top cell band gap, current matching of sub cells, precise lattice matching of sub cell materials, proposal of InGaP-Ge heteroface bottom cell, and introduction of DH-structure tunnel junction. In addition, we have realized high-efficiency concentrator InGaP/InGaAs/Ge 3-junction solar cell modules (with area of 7000 cm2) with an out-door efficiency of 27% as a result of developing high-efficiency InGaP/InGaAs/Ge 3-junction cells, low optical loss Fresnel lens and homogenizers, and designing low thermal conductivity modules. Future prospects are also presented. We have proposed concentrator III-V compound MJ solar cells as the 3rd-generation solar cells in addition to 1st-generation crystalline Si solar cells and 2nd-generation thin-film solar cells. We are now challenging to develop low-cost and high output power concentrator MJ solar cell modules with an output power of 400 W/m2 for terrestrial applications and high-efficiency, light-weight and low-cost MJ solar cells for space applications. © 2006 Elsevier B.V. All rights reserved.
CITATION STYLE
Yamaguchi, M., Takamoto, T., & Araki, K. (2006). Super high-efficiency multi-junction and concentrator solar cells. Solar Energy Materials and Solar Cells, 90(18–19), 3068–3077. https://doi.org/10.1016/j.solmat.2006.06.028
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