Ultrafast photoinduced electron transfer across semiconductor-liquid interfaces in the presence of electric fields

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Abstract

The rates of photoinduced electron transfer from p-InP to Fe(CN)64-/3- acceptors in aqueous electrolyte have been determined as a function of the initial potential drop (i.e., band bending (VBO)) in the semiconductor space charge layer using femtosecond luminescence up-conversion techniques. The effects of electric field on electron transfer were separated from the effects of field-enhanced charge separation and surface recombination through a rigorous numerical solution of the coupled continuity and Poisson equations using a Cray supercomputer. A very strong dependence of the electron-transfer velocity (Set) on VBO was found, Set reached a saturation value of 5 × 107 cm/s when the initial value of VBO in the dark was ≥0.5 eV. When the initial value of VBO was set near zero, Set was 9 × 103 cm/s. Hot electron injection processes appear to play a role in this behavior. © 1994 American Chemical Society.

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Rosenwaks, Y., Thacker, B. R., Nozik, A. J., Ellingson, R. J., Burr, K. C., & Tang, C. L. (1994). Ultrafast photoinduced electron transfer across semiconductor-liquid interfaces in the presence of electric fields. Journal of Physical Chemistry, 98(11), 2739–2741. https://doi.org/10.1021/j100062a007

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