The epitaxial lift-off (ELO) technique can be used to separate a III-V solar cell structure from its underlying GaAs or Ge substrate. ELO from 4-inch Ge wafers is shown and 2-inch GaAs wafer reuse after lift-off is demonstrated without degradation in performance of the subsequent thin-film GaAs solar cells that were retrieved from it. Since a basic wet chemical smoothing etch procedure appeared insufficient to remove all the surface contamination, wafer re-preparation is done by a chemo-mechanical polishing procedure. Copyright © 2010 John Wiley & Sons, Ltd.
CITATION STYLE
Bauhuis, G. J., Mulder, P., Haverkamp, E. J., Schermer, J. J., Bongers, E., Oomen, G., … Strobl, G. (2010). Wafer reuse for repeated growth of III-V solar cells. Progress in Photovoltaics: Research and Applications, 18(3), 155–159. https://doi.org/10.1002/pip.930
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