Weak localization and antilocalization in topological insulator thin films with coherent bulk-surface coupling

Abstract

We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional topological insulator. We derive approximate analytical expressions for the low-field magnetoresistance as a function of bulk doping and bulk-surface tunneling rate. Our results reveal parameter regimes for both weak localization and weak antilocalization, and include diffusive Weyl semimetals as a special case. © 2012 American Physical Society.