Graphene is a rapidly rising star on the horizon of materials science and condensed-matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality, and, despite its short history, has already…
Semiconductors
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The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and ...
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Samples of 53 materials that are used or potentially can be used or in the fabrication of microelectromechanical systems and integrated circuits were prepared: single-crystal silicon with two doping levels, polycrystalline silicon with two doping…
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Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since June 2010 are…
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All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping…
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The etch rates for 317 combinations of 16 materials (single-crystal silicon, doped, and undoped polysilicon, several types of silicon dioxide, stoichiometric and silicon-rich silicon nitride, aluminum, tungsten, titanium, Ti/W alloy, and two brands…
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Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 mum complementary metal-oxide-semiconductor (CMOS) technology. A systematic consideration of the required…
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In this review, recent developments in the fabrication and understanding of the electronic properties of graphene nanostructures are discussed. After a brief overview of the structure of graphene and the two-dimensional transport properties, the…
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Ever since the first publications by R.J. Schwartz in 1975, research into back-contact cells as an alternative to cells with a front and rear contact has remained a research topic. In the last decade, interest in back-contact cells has been growing…
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A simple method for implementing the steady-state photoconductance technique for determining the minority-carrier lifetime of semiconductor materials is presented. Using a contactless instrument, the photoconductance is measured in a…
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Resistivity and Hall-coefficient measurements are normally carried out on samples shaped such that the current stream-lines run parallel or virtually parallel. It is shown that these measurements can also be made on arbitrarily shaped lamellae in…
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We present a comprehensive, up-to-date compilation of band parameters for the technologically important IIIV zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their…
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The scattering from metal nanoparticles near their localized plasmon resonance is a promising way of increasing the light absorption in thin-film solar cells. Enhancements in photocurrent have been observed for a wide range of semiconductors and…
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情報幾何では, 確率分布を要素とする多様体上にフィッシャー計量及びα-接続という微分幾何学的構造を導入する. これは相対エントロピー(Kullback-Leiblerダイバージェンス)の幾何ともみなせ, 本論文では, 量子状態(密度作用素)を要素とする多様体上にフィッシャー計量とα-接続(特にα=1の場合)の類似物を導入するいくつかの試みについて紹介する. 単なる数学的事実の解説にとどまらず, それらの背景や動機, 今後の展望についても言及する.
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The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff…
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Recent attempts have been made to increase the efficiency of solar cells by introducing an impurity level in the semiconductor band gap. We present an analysis of such a structure under ideal conditions. We prove that its efficiency can exceed not…
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Thediffusion of boron in silicon has been investigated by ap-n junction method over the temperature range of 10501350C andin silicon material where the n-type impurity density varied overa range 2 1013 to 8 1019 at./cm3. The diffusion coefficient…
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Zinc oxide is a unique material that exhibits semiconducting and piezoelectric dual properties. Using a solid-vapour phase thermal sublimation technique, nanocombs, nanorings, nanohelixes/nanosprings, nanobelts, nanowires and nanocages of ZnO have…
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We have achieved mobilities in excess of 200,000 cm 2/Vs at electron densities of ~210 11 cm -2 by suspending single layer graphene. Suspension ~150 nm above a Si/SiO2 gate electrode and electrical contacts to the graphene was achieved by a…
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Student (Postgraduate)Guerara, Algeria -
Student (Bachelor)School of Photovoltaic and Renewable Energy Engineering, Univeristy of New South Wales -
ProfessorKTH Royal Institute of Technology
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Student (Bachelor)Logic Reliability Group, IIT Bombay -
Post DocIAPP, TU Dresden