Federico Iori
No city added in contact information yet.Research field: Physics
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Publications
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Journal Article (16)
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Olivia Pulci, Elena Degoli, Federico Iori et al. (2010) Electronic and optical properties of Si and Ge nanocrystals: An ab initio study, 178-181. In Superlattices and Microstructures 47 (1).
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Maurizia Palummo, Federico Iori, Rodolfo Del Sole et al. (2010) Giant excitonic exchange splitting in Si nanowires: First-principles calculations, 121303. In Physical Review B 81 (12).
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Degoli, Guerra E;, Iori R; et al. (2009) Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures, 575-586. In COMPTES RENDUS PHYSIQUE 10 (6).
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Iori, Ossicini F;, S (2009) Effects of simultaneous doping with boron and phosphorous on the structural, electronic and optical properties of silicon nanostructures, 939-946. In PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 41 (6).
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Palummo, Iori M;, Del Sole F; et al. (2009) Electronic properties and dielectric response of surfaces and nanowires of silicon from ab-initio approaches, 234-239. In SUPERLATTICES AND MICROSTRUCTURES 46 (1-2).
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E. Papalazarou, Matteo Gatti, M. Marsi et al. (2009) Valence-band electronic structure of V2O3: Identification of V and O bands. In Physical Review B 80 (15).
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Ossicini, Bisi S;, Degoli O; et al. (2008) First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping, 479-492. In JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 8 (2).
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Iori, Degoli F;, Palummo E; et al. (2008) Novel optoelectronic properties of simultaneously n- and p-doped silicon nanostructures, 337-347. In SUPERLATTICES AND MICROSTRUCTURES 44 (4-5).
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Ossicini, Degoli S;, Iori E; et al. (2007) Doping in silicon nanocrystals, 2724-2729. In SURFACE SCIENCE 601 (13).
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Iori, Ossicini F;, Degoli S; et al. (2007) Doping in silicon nanostructures, 1312-1317. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 204 (5).
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Conference Proceedings (1)
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Magri, Degoli R;, Iori E; et al. (2006) Role of surface passivation and doping in silicon nanocrystals, 1166-1169. In RECENT PROGRESS IN COMPUTATIONAL SCIENCES AND ENGINEERING, VOLS 7A AND 7B.
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