Gebhard Matt, Ph.D.'s Publications

Markus C. Scharber, Christoph Lungenschmied, Hans-Joachim Egelhaaf, Gebhard Matt, Mateusz Bednorz, Thomas Fromherz, Jia Gao, Dorota Jarzab, Maria a. Loi (2011) Charge transfer excitons in low band gap polymer based solar cells and the role of processing additives. In Energy & Environmental Science.

Almanta Pivrikas, Mujeeb Ullah, Th.B. Singh, Clemens Simbrunner, G. Matt, Helmut Sitter, N.S. Sariciftci (2011) Meyer–Neldel rule for charge carrier transport in fullerene devices: A comparative study, 161-168. In Organic Electronics 12 (1).

Gebhard J Matt, Thomas Fromherz, Mateusz Bednorz, Saeid Zamiri, Guillaume Goncalves, Christoph Lungenschmied, Dieter Meissner, Helmut Sitter, Niyazi Serdar Sariciftci, Christoph J Brabec, Günther Bauer (2010) Fullerene sensitized silicon for near- to mid-infrared light detection., 647-50. In Advanced materials (Deerfield Beach, Fla.) 22 (5).

(2010) Our choice from the recent literature, 128-129. In Nature Photonics 4 (3).

Philipp Stadler, Anna M. Track, Mujeeb Ullah, Helmut Sitter, Gebhard J. Matt, Georg Koller, Thokchom B. Singh, Helmut Neugebauer, N. Serdar Sariciftci, Michael G. Ramsey (2010) The role of the dielectric interface in organic transistors: A combined device and photoemission study, 207-211. In Organic Electronics 11 (2).

Peter Burgholzer, Gebhard J Matt, Markus Haltmeier, Günther Paltauf (2007) Exact and approximative imaging methods for photoacoustic tomography using an arbitrary detection surface, 1-10. In Physical Review E 75 (4).

Alberto Montaigne Ramil, Thokchom B Singh, N HABER, N. Marjanović, Serap Günes, Andrei Andreev, Gebhard J Matt, Günther Resel, Helmut Sitter, Niyazi Serdar Sariciftci (2006) Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors, 123-127. In Journal of Crystal Growth 288 (1).

Gebhard J Matt, Th. B. Singh, Niyazi Serdar Sariciftci, A. Montaigne Ramil, H. Sitter (2006) Switching in C[sub 60]-fullerene based field effect transistors, 263516. In Applied Physics Letters 88 (26).

Th. B Singh, N. Marjanović, P Stadler, M Auinger, Gebhard J Matt, S. Günes, Niyazi Serdar Sariciftci, Reinhard Schwödiauer, Siegfried Bauer (2005) Fabrication and characterization of solution-processed methanofullerene-based organic field-effect transistors, 83714. In Journal of Applied Physics 97 (8).

T SINGH, N. Marjanović, Gebhard J Matt, S GUNES, Niyazi Serdar Sariciftci, A MONTAIGNERAMIL, Andrei Andreev, H SITTER, Reinhard Schwödiauer, Siegfried Bauer (2005) High-mobility n-channel organic field-effect transistors based on epitaxially grown C60 films, 105-110. In Organic Electronics 6 (3).

Gebhard J Matt, Thomas Fromherz, Helmut Neugebauer, Niyazi Serdar Sariciftci (2005) Highly nonlinear transport phenomena in fullerene based diodes, 530–533. In Electronic Properties of Novel Nanostructures.

Gebhard J Matt, Niyazi Serdar Sariciftci, T Fromherz (2004) Anomalous charge transport behavior of Fullerene based diodes, 1570. In Applied Physics Letters 84 (9).

Th. B. Singh, N. Marjanović, Gebhard J Matt, Niyazi Serdar Sariciftci, Reinhard Schwödiauer, Siegfried Bauer (2004) Nonvolatile organic field-effect transistor memory element with a polymeric gate electret, 5409. In Applied Physics Letters 85 (22).

Christoph Winder, Christoph Lungenschmied, Gebhard J Matt, Niyazi Serdar Sariciftci, Ana F Nogueira, Ivan Montanari, James R Durrant, Christian Arndt, Uladzimir Zhokhavets, Gerhard Gobsch (2003) Excited state spectroscopy in polymer fullerene photovoltaic devices under operation conditions, 577-580. In Synthetic Metals 139 (3).

H Sitter, Andrei Andreev, Gebhard J Matt, Niyazi Serdar Sariciftci (2003) Hot wall epitaxial growth of highly ordered organic epilayers, 9-13. In Synthetic Metals 138 (1-2).

Christoph Winder, Andrei Andreev, Helmut Sitter, Gebhard J Matt, Niyazi Serdar Sariciftci, Dieter Meissner (2003) Optoelectronic devices based on para-sexiphenyl films grown by Hot Wall Epitaxy, 573-576. In Synthetic Metals 139 (3).

Andrei Andreev, R Resel, D.M. Smilgies, Harald Hoppe, Gebhard J Matt, Helmut Sitter, Niyazi Serdar Sariciftci, Dieter Meissner, H Plank, O. Zrzavecka (2003) Oriented organic semiconductor thin films, 59-63. In Synthetic Metals 138 (1-2).

Andrei Andreev, H Sitter, R Resel, D.M. Smilgies, H Hoppe, Gebhard J Matt, Niyazi Serdar Sariciftci, D Meissner, D Lysacek, L Valek (2002) Highly aligned organic semiconductor thin films grown by hot wall epitaxy, 61–70. In Molecular Crystals and Liquid Crystals 385 (1).

Helmut Sitter, Andrei Andreev, Gebhard J Matt, Niyazi Serdar Sariciftci (2002) Hot-wall-epitaxy - the method of choice for the growth of highly ordered organic epilayers, 51-60. In Molecular Crystals and Liquid Crystals.

Christoph Winder, Gebhard J Matt, Jan C Hummelen, René A J Janssen, Niyazi Serdar Sariciftci, Christoph J Brabec (2002) Sensitization of low bandgap polymer bulk heterojunction solar cells, 373-379. In Thin Solid Films.

Andrei Andreev, Gebhard J Matt, Helmut Sitter, Christoph J Brabec, Dirk Badt, Helmut Neugebauer, Niyazi Serdar Sariciftci (2001) High oriented epitaxial oligomer/fullerene structures grown by hot wall epitaxy, 235-239. In Synthetic Metals 116 (1-3).

Gebhard J Matt, Andrei Andreev, Helmut Sitter, Christoph J Brabec, Helmut Neugebauer, Hinterdorfer Peter, Niyazi Serdar Sariciftci (2001) Para- sexiphenyl/C60 bi- and multilayers grown by hot wall epitaxy, 1373-1374. In Synthetic Metals 121 (1-3).

Andrei Andreev, Gebhard J Matt, Christoph J Brabec, H. Sitter, D. Badt, H. Seyringer, Niyazi Serdar Sariciftci (2000) Highly Anisotropically Self-Assembled Structures of para-Sexiphenyl Grown by Hot-Wall Epitaxy, 629-633. In Advanced Materials 12 (9).

Gebhard J Matt, Christoph J Brabec, T. Nguyen Manh, D. Stifter, H. Sitter, Niyazi Serdar Sariciftci (1999) Fullerene-Oligophenyl bilayers grown by hot wall epitaxy, 656-657. In Synthetic Metals 101 (1-3).

Gebhard J Matt (1999) Fullerene-oligophenyl multilayers grown by hot wall epitaxy.

C KVARNSTROM, H NEUGEBAUER, Gebhard J Matt, H SITTER, Niyazi Serdar Sariciftci (1999) Investigations of fullerene thin films with in situ FTIR spectroelectrochemistry, 2430-2431. In Synthetic Metals 103 (1-3).