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Oleksandr Voznyy's Publications

Principal Scientist - Computational Materials Science, Department of Electrical and Computer Engineering, University of Toronto
Toronto, Canada

Research field: Physics - Surface and Interface Physics
semiconductor nanocrystals, multi-exciton generation, self-assembled monolayers, surfaces, DFT
Journal Article (19)

Journal Article

Wei-dong Sheng, Marek Korkusinski, Alev Devrim Güçlü, Michal Zielinski, Pawel Potasz, Eugene S. Kadantsev, Oleksandr Voznyy, Pawel Hawrylak (2012) Electronic and optical properties of semiconductor and graphene quantum dots, 328-352. In Frontiers of Physics 7 (3).
O. Voznyy, A. Güçlü, P. Potasz, P. Hawrylak (2011) Effect of edge reconstruction and passivation on zero-energy states and magnetism in triangular graphene quantum dots with zigzag edges, 165417. In Physical Review B.
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P. Potasz, A. Güçlü, Oleksandr Voznyy, J. Folk, P. Hawrylak (2011) Electronic and magnetic properties of triangular graphene quantum rings, 174441. In Physical Review B 83 (17).
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Oleksandr Voznyy (2011) Mobile Surface Traps in CdSe Nanocrystals with Carboxylic Acid Ligands, 15927-15932. In J. Phys. Chem. C 115 (32).
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Marek Korkusinski, Oleksandr Voznyy, Pawel Hawrylak (2011) Theory of highly excited semiconductor nanostructures including Auger coupling : Exciton-biexciton mixing in CdSe nanocrystals, 155327. In Physical Review B.
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Oleksandr Voznyy, Alev Devrim Güçlü, Pawel Potasz, Pawel Hawrylak (2010) Edge stability, reconstruction, zero-energy states and magnetism in triangular graphene quantum dots with zigzag edges, 5. In arXiv.
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Marek Korkusinski, Oleksandr Voznyy, Pawel Hawrylak (2010) Fine structure and size dependence of exciton and biexciton optical spectra in CdSe nanocrystals, 245304. In Phys. Rev. B 82 (24).
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Peter Maksymovych, Oleksandr Voznyy, Daniel B. Dougherty, Dan C. Sorescu, John T. Yates Jr. (2010) Gold adatom as a key structural component in self-assembled monolayers of organosulfur molecules on Au(111), 206-240. In Prog. Surf. Sci. 85 (5-8).
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Jan J. Dubowski, Oleksandr Voznyy, G.M. Marshall (2010) Molecular self-assembly and passivation of GaAs (001) with alkanethiol monolayers: A view towards bio-functionalization, 5714-5721. In Appl. Surf. Sci. 256 (19).
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Oleksandr Voznyy, Jan J. Dubowski (2009) C(4 × 2) Structures of Alkanethiol Monolayers on Au (111) Compatible with the Constraint of Dense Packing, 7353–7358. In Langmuir 25 (13).
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Ruibing Wang, Christopher I Ratcliffe, Xiaohua Wu, Oleksandr Voznyy, Ye Tao, Kui Yu (2009) Magic-Sized Cd 3 P 2 II-V Nanoparticles Exhibiting Bandgap Photoemission, 17979–17982. In J. Phys. Chem. C 113 (42).
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Alev Devrim Güçlü, Pawel Potasz, Oleksandr Voznyy, Marek Korkusinski, Pawel Hawrylak (2009) Magnetism and Correlations in Fractionally Filled Degenerate Shells of Graphene Quantum Dots, 246805. In Phys. Rev. Lett. 103 (24).
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Oleksandr Voznyy, Jan J. Dubowski, John T. Yates Jr., Peter Maksymovych (2009) The Role of Gold Adatoms and Stereochemistry in Self-Assembly of Methylthiolate on Au(111), 12989–12993. In J. Am. Chem. Soc. 131 (36).
Oleksandr Voznyy, Jan J. Dubowski (2008) Adsorption Kinetics of Hydrogen Sulfide and Thiols on GaAs (001) Surfaces in a Vacuum, 3726-3733. In J. Phys. Chem. C 112 (10).
Oleksandr Voznyy, Jan J. Dubowski (2008) Structure of thiol self-assembled monolayers commensurate with the GaAs (001) surface., 13299. In Langmuir 24 (23).
Oleksandr Voznyy, Radoslaw Stanowski, Jan J. Dubowski (2006) Multibandgap quantum well wafers by IR laser quantum well intermixing : simulation of the lateral resolution of the process, 48. In Journal of Laser Micro/Nanoengineering 1 (1).
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Oleksandr Voznyy, Jan J. Dubowski (2006) Structure, bonding nature, and binding energy of alkanethiolate on As-rich GaAs (001) surface: a density functional theory study., 23619-22. In J. Phys. Chem. B 110 (47).
V G Deibuk, Oleksandr Voznyy (2005) Thermodynamic Stability and Redistribution of Charges in Ternary AlGaN , InGaN , and InAlN Alloys, 623-628. In Semiconductors 39 (6).
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Oleksandr Voznyy, V G Deibuk (2004) The Role of Alloying Effects in the Formation of Electronic Structure of Unordered Group III Nitride Solid Solutions, 316-321. In Semiconductors 38 (3).
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