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A 0 . 039um 2 High Performance eDRAM Cell based on 32nm High-K / Metal SOI Technology

by N Butt, K Mcstay, A Cestero, H Ho, W Kong, … S Fang, R Krishnan, B Khan, A Tessier, W Davies, Y Zhang, J Johnson, S Rombawa, R Takalkar, A Blauberg, K V Hawkins, J Liu, S Rosenblatt, P Goyal, S Gupta, J Ervin, Z Li, S Galis, J Barth, M Yin T Weaver, J H Li, S Narasimha, W K Henson, N Robson, T Kirihata, M Chudzik, E Maciejewski, P Agnello, S Stiffler, S S Iyer, Hopewell Junction show all authors
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Pages: 616-619

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Readership Statistics

12 Readers on Mendeley
by Discipline
 
33% Electrical and Electronic Engineering
 
33% Materials Science
 
17% Engineering
by Academic Status
 
42% Researcher (at a non-Academic Institution)
 
17% Ph.D. Student
 
8% Student (Master)
by Country
 
33% United States
 
25% France
 
8% China

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