A 0.1/spl mu/m 1.8V 256Mb 66MHz Synchronous Burst PRAM

doi:10.1109/ISSCC.2006.1696081

A 0.1/spl mu/m 1.8V 256Mb 66MHz Synchronous Burst PRAM

by Sangbeom Kang Sangbeom Kang, WooYeong Cho WooYeong Cho, Beak-Hyung Cho Beak-Hyung Cho, Kwang-Jin Lee Kwang-Jin Lee, Chang-Soo Lee Chang-Soo Lee, … Hyung-Rock Oh Hyung-Rock Oh, Byung-Gil Choi Byung-Gil Choi, Qi Wang Qi Wang, Hye-Jin Kim Hye-Jin Kim, Mu-Hui Park Mu-Hui Park, Yu-Hwan Ro Yu-Hwan Ro, Suyeon Kim Suyeon Kim, Du-Eung Kim Du-Eung Kim, Kang-Sik Cho Kang-Sik Cho, Choong-Duk Ha Choong-Duk Ha, Youngran Kim Youngran Kim, Ki-Sung Kim Ki-Sung Kim, Choong-Ryeol Hwang Choong-Ryeol Hwang, Choong-Keun Kwak Choong-Keun Kwak, Hyun-Geun Byun Hyun-Geun Byun, Yun Sueng Shin Yun Sueng Shin show all authors

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2006 IEEE International Solid State Circuits Conference Digest of Technical Papers (2006)

Publisher: IEEE, Pages: 487-496

ISSN: 01936530
ISBN: 1424400791
DOI: 10.1109/ISSCC.2006.1696081

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Abstract

A 256Mb PRAM featuring synchronous burst read operation is developed. Using a charge-pump system, write performance is characterized at 1.8V supply. Measured initial read access time and burst-read access time are 62ns and 10ns, respectively. The maximum write throughput is 3.3MB/S