Abstract
An integrated low-noise amptifier and downconversion mixer openting at 1 GHz has been fabricated for the first time in 1 μm CMOS. The overall conversion gain is almost 20 dB, the double-sideband noise figure is 3.2 dB, the IIP3 is +8 dBm, and the drcuit takes 9 mA from a 3 V supply. Circuit design methods which exploit the features of CMOS weUsuited to these functions are in large part responsible for this performance. The front-end is also characterized in seven! other ways relevant to direct-conversion receivers.
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CITATION STYLE
Rofougaran, A., Chang, J. Y. C., Rofougaran, M., & Abidi, A. A. (1998). A 1 GHz CMOS RF front-end IC for a direct-conversion wireless receiver. In Integrated Circuits for Wireless Communications (pp. 248–257). Wiley-IEEE Press. https://doi.org/10.1109/9780470544952.ch3
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