A 65-nm CMOS fully integrated transceiver module for 60-GHz wireless HD applications

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Abstract

A fully integrated WirelessHD compatible 60-GHz transceiver module in 65-nm CMOS process is presented, covering the four standard channels. The silicon die is flip-chipped on top of a low-cost HTCC module which also includes an external 65-nm CMOS PA and large beamwidth antennas targeting industrial manufacturability. The module achieves a 16QAM OFDM modulation wireless link with 3.8 Gbps over 1 m. The transceiver consumption is 454 mW in RX mode (including PLL) and 1090 mW in TX mode (including PLL and external PA). © 2011 IEEE.

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Siligaris, A., Richard, O., Martineau, B., Mounet, C., Chaix, F., Ferragut, R., … Vincent, P. (2011). A 65-nm CMOS fully integrated transceiver module for 60-GHz wireless HD applications. In IEEE Journal of Solid-State Circuits (Vol. 46, pp. 3005–3017). https://doi.org/10.1109/JSSC.2011.2166662

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