The growth of GaN on graphene by molecular beam epitaxy was investigated. The most stable epitaxial relationship, i.e. [00.1]-oriented grains, is obtained at high temperature and N-rich conditions, which match those for nanowire growth. Alternatively, at moderate temperature and Ga-rich conditions, several metastable orientations are observed at the nucleation stage, which evolve preferentially towards [00.1]-oriented grains. The dependence of the nucleation regime on growth conditions was assigned to Ga adatom kinetics. This statement is consistent with the calculated graphene/GaN in-plane lattice coincidence and supported by a combination of transmission electron microscopy, x-ray diffraction, photoluminescence, and Raman spectroscopy experiments.
CITATION STYLE
Gruart, M., Feldberg, N., Gayral, B., Bougerol, C., Pouget, S., Bellet-Amalric, E., … Daudin, B. (2020). Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy. Nanotechnology, 31(11). https://doi.org/10.1088/1361-6528/ab5c15
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