The realization of integrated active devices is a key point for on-chip optical interconnects at 1.3-1.5 μm wavelengths. The required devices are high-speed, low-noise, and highly sensitive detectors, as well as efficient switching devices and optical modulators. In this context, as material compatibility must be insured, the group IV silicon-germanium technology is important due to the energy band engineering that it allows, with the integration of Si/SiGe heterostructures into the existing silicon technology. The aim of this chapter is to give a review of the recent progress made in the field of active SiGe devices for optical interconnects. Attention is focused on strained-layer superlattice SiGe/Si and pure Ge photodetectors, as well on SiGe-based switching devices and optical modulators.
CITATION STYLE
Cassan, E., Laval, S., Marris, D., Rouvière, M., Vivien, L., Halbwax, M., … Pascal, D. (2006). Active SiGe devices for optical interconnects. Springer Series in Optical Sciences, 119. https://doi.org/10.1007/978-3-540-28912-8_6
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