On the Al-Si, Al-Ge, and Al-Ge-Si systems and their application to brazing in high power semiconductor devices

Abstract

Results of the Smith thermal analysis studies13 of the Al-Si, Al-Ge, and Al-Ge-Si systems are presented and compared with previous work. Isothermal and vertical sections for the Al-Ge-Si system, computed from thermodynamic data, are given and compared to the experimental data. The computed sections are used to interpret results of vacuum brazing experiments in which Si discs were joined to Mo with an Al-Ge eutectic alloy. © 1993 ASM International.