Polymethyl Methacrylate (PMMA) is an organic material widely used in electronic photoresists. Recently, pentacene OTFTs were fabricated using this material as dielectric film, which is considered to have a dielectric constant similar to SiO2. In this paper we characterize PMMA layers in order to determine its dielectric constant, current density and interface states density when used as a gate dielectric in the manufacturing of organic thin film transistors. MIS capacitors were prepared, with PMMA as a dielectric, chromium as gate metal and aluminum as the back contact on Si wafers. I-V and C-V characteristics measurements reported a dielectric constant of 2.6 at 1 MHz. Current density across the dielectric is less than 2×10-8 A/cm2 and interface states density is below 2×1012 cm-2. © 2006 IEEE.
CITATION STYLE
Mejia, I., & Estrada, M. (2006). Characterization of Polymethyl Methacrylate (PMMA) layers for OTFTs gate dielectric. In Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest (pp. 375–377). https://doi.org/10.1109/ICCDCS.2006.250890
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