CMOS-MEMS 3-bit digital capacitors with tuning ratios greater than 60:1

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Abstract

3-bit microelectromechanical systems digital capacitors with greater than 60:1 tuning ratios are monolithically integrated with CMOS using a post-CMOS fabrication process. The digital capacitors are composed of many switched capacitors in parallel, which use a combination of vertical (out-of-plane) electrothermal actuation and lateral (in-plane) electrostatic actuation to toggle their capacitance value. Measured results demonstrate quality factors greater than 150 at 1 GHz and electrical self-resonant frequencies beyond 10 GHz. The capacitors can be switched in less than 1 ms with 4 V for electrothermal actuation and 20 V for electrostatic actuation. The effects of repeated actuation are presented to assess the reliability of the digital capacitors. © 2011 IEEE.

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Reinke, J., Fedder, G. K., & Mukherjee, T. (2011). CMOS-MEMS 3-bit digital capacitors with tuning ratios greater than 60:1. In IEEE Transactions on Microwave Theory and Techniques (Vol. 59, pp. 1238–1248). https://doi.org/10.1109/TMTT.2011.2114363

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