The relation between the decrease in resistivity and crystal growth of an indium-tin-oxide (ITO) thin film which was prepared on a substrate at room temperature and then heated from room temperature to ∼ 533 K in a vacuum was studied. Two steps of resistivity decrease on heat treatment at around 383 K and 493 K were observed. That at the lower temperature took place while keeping the amorphous state, being due to a small increase in carrier concentration and also a slight improvement of Hall mobility. The other decrease at the higher temperature is due to crystallization from the amorphous state, which gave rise to the great increase in carrier concentration. © 1999 Elsevier Science S.A. All rights reserved.
CITATION STYLE
Morikawa, H., & Fujita, M. (1999). Crystallization and decrease in resistivity on heat treatment of amorphous indium tin oxide thin films prepared by d.c. magnetron sputtering. Thin Solid Films, 339(1–2), 309–313. https://doi.org/10.1016/S0040-6090(98)01156-0
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