Design and Modeling Method of Package for Power GaN HEMTs to Limit the Input Matching Sensitivity
Integrated Nonlinear Microwave and MillimeterWave Circuits InMMIC (2011)
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Abstract
This paper proposes a packaged transistor modeling using lumped elements. This model allows studying the input impedance dispersion when a range of variation is applied to various package components. This dispersion is also highlighted when a load impedance variation is applied to the package transistor. It is demonstrated that this dispersion can be corrected using a specific input pre-matching and by having a very good information about input return loss contours. Moreover, this specific packaged transistor presents input impedance close to 50Ω over 3.0-3.8GHz.
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