SiC was mixed with Mg and B and reacted by either a one-step in situ or two-step method at 650 or 850 °C. By doing so, it was possible to determine the extent to which scattering via C doping influences the magnitude of field dependent critical current density, Jc(H), compared to pinning via generation of microstructural disorder. The one-step reaction method leads to Mg2Si formation and at the same time to more C doping of MgB 2 than the two-step method. Carbon increases both the irreversibility field, Hirr, and upper critical field, Hc2 (T<28K). However, for the temperatures (6 and 20K) and fields (up to 7T) studied, pinning rather than scattering overwhelmingly dominates the magnitude of the field dependent critical current density. © 2009 IOP Publishing Ltd.
CITATION STYLE
Chen, S. K., Xu, X., Kim, J. H., Dou, S. X., & MacManus-Driscoll, J. L. (2009). Determination of the relative influences of carbon doping and disorder on field and temperature dependent critical current density of MgB2. Superconductor Science and Technology, 22(12). https://doi.org/10.1088/0953-2048/22/12/125005
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