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Effect of Substrate Orientation on the Growth Direction of InxGa1-xAs Nanowires (NWs)

IOP Conference Series: Materials Science and Engineering (2018) 395(1)
DOI: 10.1088/1757-899X/395/1/012003
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Abstract

We have grown the InxGal-xAs NWs on GaAs(lll), GaAs(100) and Si(lll) substrates via Vapor-Solid-Solid (VSS) mode using MOCVD. We observed that the cylindrical NWs grow perpendicular to the GaAs(lll) substrate. The straight line NWs with an angle of 50.60° to the normal were occurred on GaAs(l00), while kinks NWs were perceived on Si(lll). We found that the growth direction of the InxGal-xAs NWs can be easily controlled using certain orientation of the substrate by considering its lattice mismatch and its surface energy.

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Wibowo, E., Ulya, N., Othaman, Z., Marwoto, P., Sumpono, I., Aji, M. P., … Sutisna. (2018). Effect of Substrate Orientation on the Growth Direction of InxGa1-xAs Nanowires (NWs). In IOP Conference Series: Materials Science and Engineering (Vol. 395). Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/395/1/012003

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