Electron and X-ray diffraction analyses of ternary compound (I-III-VI2) thin films

Abstract

An investigation of CuInS2, CuInSe2 and CuInTe2 thin films by X-ray and electron microscopy analyses is presented. X-ray diffraction data on both the source (powder) material and the resulting thin films are reported. These data are compared with calculated values. The effects of substrate temperature and film thickness on film orientation have been studied by electron diffraction. Some preferred orientation occurs over the substrate temperature range 200°C < Tsub < 360°C and for the thickness exceeding 1500 Å. Good quality (single-phase) films are reported for CuInS2 using double-source deposition techniques and for CuInSe2 and CuInTe2 using single-source methods. The chalcopyrite structure of these films is discussed. © 1976.