Experimental study on effect of second-harmonic injection at input of classes F and F−1 GaN power amplifiers
Electronics Letters (2010)
- ISSN: 00135194
- DOI: 10.1049/el.2010.0392
Available from ieeexplore.ieee.org
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Abstract
This presented study focuses on the impact of gate-source voltage waveforms on power added efficiency performances of GaN HEMTs for the design of class F and class F-1 amplifiers. It is shown that second-harmonic signal injection at the gate port of transistors can lead to efficiency improvements in the case of class F operation and efficiency deteriorations in the case of class F-1 operation. This work is applied to a 15 W GaN HEMT die from Cree at a fundamental frequency Fo equal to 2 GHz. Calibrated on-wafer time domain measurements are reported.
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