GaN transistor characterization and modeling activities
performed within the frame of the KorriGaN project



Tibault Reveyrand, Walter Ciccognani, Giovanni Ghione, Olivier Jardel, Ernesto Limiti,
Antonio Serino, Vittorio Camarchia, Federica Cappelluti and Raymond Quéré






Published in
International Journal of Microwave and Wireless Technologies, volume 2,
issue 01, April 2010, pp. 51-61.



doi: 10.1017/S1759078710000085




This paper is a postprint of a paper submitted to and accepted for publication in
International Journal of Microwave and Wireless Technologies and is subject to
Cambridge University Press Copyright.

http://journals.cambridge.org/action/displayJournal?jid=MRF

GaN transistor characterization and
modeling activities performed within the
frame of the KorriGaN project
tibault reveyrand1, walter ciccognani2, giovanni ghione3, olivier jardel4,
ernesto limiti2, antonio serino2, vittorio camarchia3, federica cappelluti3
and raymond que’re’ 1
The present paper presents the transistor modeling work achieved in the GaN European project KorriGaN (“Key Organisation
for Research in Integrated Circuits in GaN technology”). The KorriGaN project (2005–09) has released 29 GaN circuits such
as high-power amplifiers (HPAs), low-noise amplifiers (LNAs), and switches. Modeling is one of the main key to reach suc-
cessful designs. Therefore, nonlinear models of European GaN HEMT models have been developed. This work deals with
characterization tools such as pulsed IV, pulsed [S] parameters, load-pull measurements, and measurement-based
methods to perform GaN HEMT compact models parameters extraction. The present paper will describe the transistor mod-
eling activities in KorriGaN for HPA designs (nonlinear models including trapping and/or self-heating effects) and LNA
designs (nonlinear models and noise parameters).
Keywords: GaN, Transistor, Nonlinear model, Noise model, Load-pull measurements, Power amplifier, Trapping effects
Received 30 November 2009; Revised 31 January 2010; first published online 11 March 2010
I . I NTRODUCT ION
KorriGaN has been the largest project about GaN technology.
It was launched by EDA (European Defense Agency) in 2005
[1] for a total duration of 54 months. The main purposes of
this project were:
– to establish a complete and independent European chain
in GaN technology from wafer to the final transreceiver
Module for Radar applications;
– to demonstrate the performances and the reliability at
sub-system level of this GaN technology for defence
applications.
Seven countries were involved in this huge project: France,
Germany, Italy, Netherlands, Spain, Sweden and the United
Kingdom. KorriGaN was splitted into six sub-projects: systems
specifications, materials (wafers and epitaxies), foundry works
(including the modeling aspect of the transistors), reliability,
thermal integration, and final demonstrators. Several func-
tionalities, for which GaN technology is very promising,
have been designed: S, X, and broadband (2-6, 2-18) high-
power amplifiers (HPAs); X band and broadband robust
low-noise amplifiers (LNAs); and switches.
Four foundries were involved in the project : 3-5 Lab (F),
Chalmers (Sw), QinetiQ (UK) and Selex-SI (I). Twelve
designers teams worked with those foundries : 3-5 Lab (F),
BAE Systems Insyte (UK), Indra (Sp), Isom (Sp), Eletronica
(I), Saab (Sw), Selex SAS (UK), Selex SI (I), Thales Defence
Ltd. (UK), TNO (NL) and UMS (G).
The measurement-based compact modeling activity
(Workpackage WP3.3) was the interface between foundries
and designers. Four labs have released transistor models for
designers: Chalmers, Politecnico di Torino, University of
Roma Tor Vergata and XLIM.
The KorriGaN project has released up to 29 demonstrators
in different technologies (coplanar and microstrip) in two
runs. The modeling part was essential in the design process
of all those demonstrators.
The present paper will describe the workpackage dedicated
to measurement-based modeling into the KorriGaN project as
well as the main results achieved in the framework of this
project. Detailed results about the various advances made in
the project have been given elsewhere.
First of all, an overview of the characterization and model-
ing activities in KorriGaN, will be presented, then the different
measurements setups. A part will be dedicated to an example
of nonlinear modeling from the device to the final demonstra-
tor. Finally, some research activities about self-heating, trap-
ping effects, and noise modeling will be presented.
I I . KORR IGAN MODEL ING
WORKPACKAGE ACT IV I TY
Themodeling activities took place during 36months. Thiswork-
package (named WP3.3) was in charge of the characterization
Corresponding author:
T. Reveyrand
Email: reveyrand@gmail.com
1XLIM-C2S2, 123 Avenue Albert Thomas, Cedex Limoges 87060, France. Phone:
+33 672 190 725; Fax: +33 555 45 76 66.
2Department of Electronic Engineering, University of Rome “Tor Vergata”, Via del
Politecnico 1, Rome 00133, Italy.
3Dipartimento di Elettronica, Politecnico di Torino, Turin 10129, Italy.
4Alcatel – Thales III-V Lab, Route de Nozay, Marcoussis Cedex F-91461, France.
51
International Journal of Microwave and Wireless Technologies, 2010, 2(1), 51–61. # Cambridge University Press and the European Microwave Association, 2010
doi:10.1017/S1759078710000085