G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors

Abstract

Holes in cubic semiconductors have effective spin 3/2 and very strong spin orbitinteraction. Due to these factors properties of hole bound states are highly unusual. Weconsider a single hole bound by a spherically symmetric potential, this can be an acceptoror a spherically symmetric quantum dot. Linear response to an external magnetic field ischaracterized by the bound state Lande g-factor. We calculate analytically g-factors of all boundstates.