High-mobility -channel organic field-effect transistors based on epitaxially grown C films
Organic Electronics (2005)
- ISSN: 15661199
- DOI: 10.1016/j.orgel.2005.03.006
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Abstract
Abstract: We present C60-based n-channel organic field-effect transistors with mobility in the range of 0.41cm2 V1 s1. A solution-processed organic dielectric divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB) was used as a gate dielectric and C60 films were grown on top by hot wall epitaxy. Devices characterised in inert atmosphere conditions show high stability with an on/off ratio >104. The determined mobility values are nearly gate voltage independent. Copyright &y& Elsevier
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