Light extraction efficiency of GaN-based light emitting diodes (LEDs) has improved significantly by using ITO/ZnO layer texturing. We have deliberately designed and successfully fabricated GaN-based LEDs having one and two interfaces of ITO/ZnO layer texturing in the device structure. It was found that the light extraction efficiencies of one and two interfaces of ITO/ZnO-layer texturing LEDs were 22.29% and 35.54% at 20 mA of current injection, respectively. Creating the chances of multiple light scattering at more than one interface is playing a major role to enhance light output power of the device. The source of the enhanced light output power is also discussed. © 2011 Elsevier Ltd.
CITATION STYLE
Uthirakumar, P., Kang, J. H., Ryu, B. D., & Hong, C. H. (2010). Improved light extraction efficiency of GaN-based light emitting diodes using one and two interfaces of ITO/ZnO layer texturing. Materials Science in Semiconductor Processing, 13(5–6), 329–332. https://doi.org/10.1016/j.mssp.2011.02.015
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