Influence of incorporation of Ga in amorphous In-Zn-O transparent conductive oxide films was investigated as a function of Zn/(Zn + In). For In-Zn-O films with no Ga 2 O 3, the range of Zn/(Zn + In) ratio where the amorphous phase appears became narrow at a substrate temperature of 250 °C. With increasing Ga 2 O 3 quantity, amorphous films were obtained even at a high substrate temperature of 250 °C in a wider range of Zn/(Zn + In) than that of In-Zn-O films with no Ga 2 O 3. This means that the trend of crystallization at higher substrate temperature was disturbed with additional Ga incorporation. For the film deposited from ZnO:Ga (Ga 2 O 3 : 4.5-7.5 wt%) and In 2 O 3 targets, we obtained a resistivity of 2.8 × 10 -4 Ω cm, nearly the same value as that for an In-Zn-O film with no Ga 2 O 3. The addition of more than 7.5 wt% Ga 2 O 3 induced a widening of the optical band gap. © 2008 Elsevier Ltd. All rights reserved.
CITATION STYLE
Tominaga K., T. D. S. K. S. H. T. K. M. K. M. T. (2008). Influence of Ga 2 O 3 addition on transparent conductive oxide films of In 2 O 3 -ZnO. Vacuum, 83(3), 561–563. Retrieved from http://www.scopus.com/inward/record.url?eid=2-s2.0-52949109799&partnerID=40&md5=15832bf52f68ee2b1880cb711e428135
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