Influence of traps on carrier concentration profiles measured by capacitance-voltage and drive level profiling in CIGSe-based heterojunctions

Abstract

Detailed analysis of drive level capacitance, capacitance voltage characteristics and capacitance transient was carried out to elucidate the influence of N1 defects on carrier concentration profiles. The type of hysteresis observed in CV curves proves that N1 traps originate from close-to-interface minority carrier traps. We show that in the presence of these states one must be careful while interpreting DLCP data. It was found that due to the incomplete charging of N1 defects, low frequency drive level profiles may give erroneous defects densities. © 2005 Materials Research Society.