Insitu analysis of strain relaxation during catalyst-free nucleation and growth of GaN nanowires

Abstract

Strain relaxation mechanisms occurring during self-induced growth of nitride nanowires are investigated by insitu reflection high-energy electron diffraction and exsitu high-resolution transmission electron microscopy. Epitaxial GaN nanowires nucleate on an AlN buffer layer under highly nitrogen-rich conditions via the initial formation of coherently strained three-dimensional islands according to the Volmer-Weber growth mechanism. The epitaxial strain relief in these islands occurs by two different processes. Initially, strain is elastically relieved via several shape transitions. Subsequently, plastic relaxation takes place through the formation of a misfit dislocation at the GaN/AlN interface. At the same time, a final shape transition to fully relaxed nanowires occurs. © 2010 IOP Publishing Ltd.