Abstract
In this paper, the ferroelectric polarization effect of ZrO capping layer on HfO MFM capacitor was investigated. Based on crystallinity analysis, the phase transformation from monoclinic to orthorhombic phase in HfO film can be induced by a thin ZrO capping layer. The thickness of ZrO capping layer plays an important role in the ferroelectric polarization of HfO MFM capacitor. Compared to mixed HfZrO film, the stacked ZrO/HfO film shows the advantage for suppressing the leakage issue during hightemperature ferroelectric phase transition.
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CITATION STYLE
Liu, K. W., Chen, H. H., Huang, Z. Y., Wang, W. C., Fan, Y. C., Lin, C. L., … Cheng, C. H. (2019). Investigation of phase transformation in HfO2 ferroelectric capacitor by means of a ZrO2 capping layer. In 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/EDSSC.2019.8754036
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