(Invited) The Role of Electrochemical Interfaces in ReRAM Memory Cells

Abstract

The influence of non-equilibrium states and the ambient on the state properties and the switching kinetics of redox based resistive switching memories (ReRAM) is discussed. It has been demonstrated that the underlying electrochemical processes can be studied with an atomic resolution using the atomic switch concept. We address a crucial issue on the necessity of counter charge/reaction in oxide based devices and shown that moisture often supplies this counter charge.