Ka-Band BiCMOS 4-Bit Phase Shifter with Integrated LNA for Phased Array T/R Modules

Abstract

This paper presents a 30-38 GHz 4-bit phase shifter with an integrated LNA using a 0.12 mu m SiGe BiCMOS process. The two-stage LNA is implemented using SiGe HBT, and the phase shifter is based on MOSFET switches and miniature low-pass networks. The LNA/phase shifter achieves 1 1.5 dB of gain and 5 dB noise figure at 34 GHz. The RMS phase error is less than 7 degrees at 30-38 GHz. The total chip size is 900x4010 mu m(2) (0.36 mm(2)) excluding pads, and the chip consumes only 3 mA from a 1.8 V bias supply (5.4 mW). To our best knowledge, this is the first implementation of a Ka-band silicon-based phase shifter.

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