Low-voltage ring oscillators based on polyelectrolyte-gated polymer thin-film transistors

Abstract

A polyanionic electrolyte is used as gate insulator in top-gate p-channel polymer thin-film transistors. The high capacitance of the polyelectrolyte film allows the transistors and integrated circuits to operate below 1.5 V. Seven-stage ring oscillators that operate at supply voltages down to 0.9 V and exhibit signal propagation delays as low as 300 s per stage are reported. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA.