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Monolithic Integration of Al2O3 and Si3N4 for Double-layer Integrated Photonic Chips

  • Mu J
  • de Goede M
  • Dijkstra M
  • et al.
DOI: 10.1364/iprsn.2018.ith1i.1
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Abstract

Optical coupling for monolithic integration of Al2O3 and Si3N4 layers is presented using a vertical and lateral adiabatic taper. The measured loss of the fabricated couplers is 0.49±0.03 dB at the wavelength of 1030 nm.

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APA

Mu, J., de Goede, M., Dijkstra, M., & García-Blanco, S. M. (2018). Monolithic Integration of Al2O3 and Si3N4 for Double-layer Integrated Photonic Chips (p. ITh1I.1). The Optical Society. https://doi.org/10.1364/iprsn.2018.ith1i.1

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