Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching

Abstract

We demonstrated that the 2.5nm-thick HfAIOx N-type NCFET based on defect-passivated multidomain switching can achieve a minimum 9 mV/dec subthreshold swing (SS), a negligible hysteresis of 1mV, an ultralow Ioff of 135fA/μm, a large Ion/I0ff ratio of 8.7×107 and a sub-60 mV/dec SS over 5 decade. For P-type NCFET, the non-hysteretic steep-slope switch is still reached under the synergistic effect of gate stress, defect passivation and doping engineering. The Al doping and defect passivation play the key role for reducing trap-related leakage, enhancing NC, and stabilizing multidomain switching. The highly scaled HfAIOx CMOS NCFET shows the potential for low power logic applications.