A New Interpretation of “End” Resistance Measurements

Abstract

We propose a new interpretation of the “end” resistance measurements for field-effect transistors (FET's). This interpretation is based on the solution of the current transport equations under the gate and relates the “end” resistance to the source series resistance and the channel resistance of the device. The values of the series source and drain resistances determined for GaAs ion-implanted FET's, using our formulas for the “end” resistance, are in excellent agreement with the values obtained using our modification of the Fukui method [1]. Copyright © 1984 by The Institute of Electricai and Electronics Engineers, Inc.