A new transparent conducting oxide in the Ga 2 O 3 -In 2 O 3 -SnO 2 system

Abstract

A new transparent conducting oxide (TCO), which can be expressed as Ga 3-x In 5+x Sn 2 O 16; 0.2 ≤x≤1.6, has been identified. The equilibrium phase relationships of this new material with respect to three other TCOs in Ga 2 O 3 -In 2 O 3 -SnO 2 are reported. The optical properties of this phase are slightly superior to Sn-doped indium oxide (ITO) and depend on composition. A room-temperature conductivity of 375 Ω cm -1 was obtained for H 2 -reduced Ga 2.4 In 5.6 Sn 2 O 16. This value is an order of magnitude lower than commercial ITO films, but comparable to values reported for bulk, polycrystalline Sn-doped In 2 O 3. © 1997 American Institute of Physics.