7b.3 Performance of Strained AlInN/AlN/GaN HEMTs with Si3N4 and Ultra-Thin Al2O3 Passivation
Abstract
In this paper, we report on the dc/RF characteristics of AlInN/AlN/GaN HEMTs on SiC with novel 5-nm ultra-thin ALD Al2O3 passivation for high frequency operation. The bar- rier layer contains a lower indium concentration (15%) which induces a lattice strain-induced piezoelectric field to increase the 2DEG. HEMTs were fabricated with 2x150-μm gate peri- phery and T-gate length LG~ 90 nm. We also fabricated devices with 100-nm Si3N4 passivation to compare small and large sig- nal gain as well as pulsed dc characteristics. Our results show a 25%+ decrease in parasitic capacitance and ~15% increase in small signal gain using ALD Al2O3. An intrinsic cutoff fre- quency up to ~130-GHz is reported which highlights the prom- ise of AlInN/GaN HEMTs with ultra-thin ALD Al2O3 passiva- tion.
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