A Pt/Ga2O3-ZnO/SiC schottky diode-based hydrocarbon gas sensor

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Abstract

In this paper, a novel metal-reactive insulator-silicon carbide device with a catalytic layer for hydrocarbon gas-sensing is presented. This structure, employed as a Schottky diode, utilizes sol-gel prepared Ga2O 3-ZnO layer as the reactive insulator. The sensor has been exposed to propene gas, which lowers the barrier height of the diode. The responses were stable and repeatable at operating temperatures between 300 and 600°C. The response to propene in different ambients was examined. The effect of diode bias has been investigated by analyzing the sensors response to various propene concentrations when held at constant currents of 2 and 8 mA.

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Trinchi, A., Galatsis, K., Wlodarski, W., & Li, Y. X. (2003). A Pt/Ga2O3-ZnO/SiC schottky diode-based hydrocarbon gas sensor. IEEE Sensors Journal, 3(5), 548–553. https://doi.org/10.1109/JSEN.2003.817670

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